Abstrait

Effect of Addition of B2O3 on Dielectric Properties of BMN, BZN, BMNT and BZNT

M.Y. Khaladkar, N. S. Saraf, R. R. Purandare

Niobium and tantalum-based ternary oxides have been found to be good candidates for electronic applications because of their excellent dielectric properties.In earlier studies it was found that addition of frit glass improves density, mechanical strength and dielectric properties of BMT hence, in the present study B2O3 was added to BMN, BZN, BMNT andBZNT. These samples were prepared by solid state route and the phase was confirmed by XRD. To these samples B2O3 was addedin varying weight percent (1 to 3%) and the pellets were sintered at 1250˚C. These samples were subjected to capacitance and dielectric measurements. From the results it was observed that addition of frit glassincreased the density to some extent but did not improve capacitance and infact reduced the dielectric constant drastically of the ceramics. Hence it is concluded that addition of B2O3 has detrimental effect on BMN, BZN, BMNT and BZNT.