Abstrait

Effects of gate insulator thickness and diameter over on/off current ratio in ballistic CNTFETs

Safayat-Al Imam

This paper deals with the changes of the gate insulator thickness and diameter of the nano tube on the carbon nano tube field effect transistor (CNTFET). With a large CNT diameter and thinner gate oxide enhanced onstate current can be profound. On the other hand, the off-state current improves in CNTFETs with thinner gate oxide. Also the simulation results show that the variance of insulator thickness on the threshold voltage, has no effect on the off-state current. In this way an optimum values of gate insulator thickness and diameter of the nano tube are identified to offer highest on/off current ratio of the device.