Abstrait

Electrical Parameter Extraction Of High- K/Metal Gate N-Channel UTBB FDSOI MOSFET

Rahul Sharma, S.Baishya, B. Prashanth Kumar

This Paper proposed a novel approach for obtaining and interpreting the better performance of NMOS with Ultra thin Body and BOX (UTBB) Fully Depleted Silicon on Insulator (FDSOI) technology. As the performance of FDSOI logic has already been reported, this paper highlights the extraction of electrical parameters by altering the dimensions and doping concentration of the device as per latest International Technology Roadmap for Semiconductors (ITRS) to obtain better results. Various technology options such as buried oxide thickness (BOX), Channel length and doping concentration were investigated in order to achieve a technology platform that offers controlling short channel effect to reduce the off-state leakage currents and to increase the onstate currents. The breakthrough technology brings a significant improvement in terms of performance and power management for VLSI Design.