Abstrait

Synthesis, Growth and Characterization of Rare Earth Doped (Cdzns) Thin Films

Sarika Singh, A.K.Shrivastava

Cadmium Zinc Sulphide (CdZnS) thin film grown, with and without doping on commercial glass substrate using chemical bath deposition technique. The bath temperature was kept at 700C.The pH of the solution was maintained around 11. Two different dopant viz. SmO3 and EuO3 were used for doping. The thin films so obtained were characterized using XRD, UV-Spectrophotometer and Two probe methods. The XRD pattern shows nano crystalline phase with cubic and hexagonal structure. Doped film shows the broadening peaks in XRD spectra. Scherrer formula gives particle size around 9.3nm.particle size decreasing on doping. For undoped CdZnS thin film, Optical band gap of comes out to be 2.5 eV, whereas band gap for rare earth doped CdZnS thin film was 2.4 eV, and 2.42 eV, respectively. Thus doping decreases the band gap. Photocurrent show linear increase with applied voltage. Moreover photocurrent is larger than the dark current for the same voltage